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CHA5390
24-30GHz Medium Power Amplifier
GaAs Monolithic Microwave IC Description
The CHA5390 is a high gain broadband fourstage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
Typical in JIG measurements :
15 30 10 25
5
20
Main Features * * * * * *
Broadband performances : 24-30GHz 25dBm output power. 24dB gain Good broadband matchings Low DC power consumption, 460mA @ 5V Chip size : 2.99 X 1.31 X 0.10 mm
0
15
-5
10
-10
5
-15
0
-20
-5
-25 22 24 26 28 Frequency (GHz) 30 32
-10
Input Rloss : grey solid line - Output Rloss : dash line.
Main Characteristics
Tamb. = 25C Parameter Min Typ Max Unit
Fop G P01 Id
Operating frequency range Small signal gain Output power at 1dB gain compression Bias current
24 21 24 24 25 460
30
GHz dB dBm
720
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : CHA53901012 - 12-Jan.-01
1/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
24-30GHz Medium Power Amplifier
Electrical Characteristics for Broadband Operation
Tamb = +25C, Vd1,2,3,4 = 5V Id=460mA Symbol
Fop G G Is P1dB IP3 PAE VSWRin VSWRout Id
CHA5390
Parameter
Operating frequency range Small signal gain (1) Small signal gain flatness (1) Reverse isolation Pulsed output power at 1dB compression (1) 3 order intercept point Power added efficiency at saturation Input VSWR Output VSWR Bias current
rd
Min
24 21 (2)
Typ
Max
30
Unit
GHz dB dB dB dBm dBm %
24 (2) 2 50
24
25 33 16 3.0:1 3.0:1 460 720
mA
(1) On Wafer measurements (2) [26-29 GHz]: 24dB min [24-31 GHz]: 21dB min For Tj<175C ( 80C ambient ), Id should be below 475mA under 5V bias. Current source biasing network is recommended.
Absolute Maximum Ratings
Tamb. = 25C (1) Symbol
Vd Id Vg Pin Ta Tstg Drain bias voltage Drain bias current Gate bias voltage Maximum peak input power overdrive (2) Operating temperature range Storage temperature range
Parameter
Values
6.0 720 -2.0 to +0.4 +15 -40 to +85 -55 to +155
Unit
V mA V dBm C C
(1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s.
Ref. : CHA53901012 - 12-Jan.-01
2/6
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
24-30GHz Medium Power Amplifier
CHA5390
Typical Scattering Parameters ( On wafer Sij measurements )
Bias Conditions :
Freq GHz 10,00 11,00 12,00 13,00 14,00 15,00 16,00 17,00 18,00 19,00 20,00 21,00 22,00 23,00 24,00 25,00 26,00 27,00 28,00 29,00 30,00 31,00 32,00 33,00 34,00 35,00 36,00 37,00 38,00 39,00 40,00 41,00 42,00 43,00 44,00 45,00 46,00 47,00 48,00 49,00 50,00 S11 dB -0,29 -0,28 -0,37 -0,44 -0,52 -0,72 -0,90 -1,27 -1,67 -2,46 -3,43 -4,70 -6,51 -8,25 -9,14 -8,55 -7,35 -6,98 -7,08 -8,55 -10,35 -10,35 -10,57 -9,06 -5,85 -4,00 -2,75 -2,05 -1,57 -1,31 -1,13 -0,92 -0,78 -0,68 -0,65 -0,54 -0,36 -0,27 -0,34 -0,36 -0,33
Vd1,2,3,4 = 5 Volt, Vg1=Vg2,3,4 for Id total = 460 mA.
S11 / 130,16 124,05 116,99 110,04 101,55 92,63 82,31 70,45 56,58 39,70 20,21 -3,92 -32,14 -65,38 -101,40 -132,96 -166,59 162,62 131,98 104,51 86,80 55,09 12,96 -29,71 -67,30 -102,02 -128,52 -147,84 -163,57 -176,44 172,84 163,42 154,77 146,73 139,75 133,59 127,43 121,26 115,63 110,09 104,27 S12 dB -75,37 -81,16 -72,11 -67,15 -62,83 -70,09 -71,91 -76,18 -64,68 -57,90 -70,93 -72,62 -63,69 -63,11 -58,44 -61,00 -57,18 -58,79 -59,95 -53,56 -56,73 -56,70 -60,16 -60,33 -62,25 -57,44 -50,88 -54,34 -52,72 -49,31 -46,92 -50,28 -53,84 -52,16 -52,59 -61,38 -51,37 -46,98 -41,66 -51,95 -48,05 S12 / -43,42 -71,65 -126,26 -168,43 161,43 78,51 128,46 107,49 23,57 -132,71 -36,12 -152,80 -136,16 -140,18 139,63 143,50 129,53 86,49 98,53 39,77 63,65 39,90 8,74 3,48 10,68 106,73 63,61 37,74 21,62 8,02 -24,29 -74,06 -95,08 -99,63 -134,12 -168,80 122,79 89,44 36,57 3,01 39,26
3/6
S21 dB -34,97 -28,63 -22,61 -16,98 -11,59 -6,39 -1,14 2,51 6,33 10,08 12,99 16,09 18,62 19,93 21,09 21,95 22,91 24,06 24,67 24,75 22,41 15,27 5,20 -5,52 -13,87 -25,98 -40,47 -54,58 -57,99 -44,73 -46,12 -50,08 -51,70 -53,15 -50,20 -54,54 -39,96 -35,22 -32,62 -39,27 -35,81
S21 / 121,53 83,18 38,63 -5,99 -54,05 -103,80 -160,60 145,18 87,15 29,84 -40,94 -93,03 -165,91 124,97 56,97 -10,22 -80,46 -154,23 120,37 27,75 -81,77 167,03 76,86 4,57 -54,17 -129,57 149,77 67,95 -11,22 -27,42 -20,40 -74,61 -137,05 -122,09 -107,23 110,71 -168,88 -157,54 -134,30 -123,83 -4,84
S22 dB -0,06 -0,15 -0,22 -0,60 -1,15 -1,82 -3,31 -4,18 -5,81 -7,79 -12,99 -14,82 -29,66 -19,94 -12,89 -10,26 -8,40 -7,08 -6,87 -7,49 -5,44 -5,66 -7,23 -8,61 -8,80 -7,32 -5,61 -4,56 -3,80 -2,84 -2,52 -2,34 -1,76 -1,64 -1,46 -1,40 -1,33 -1,26 -1,02 -1,07 -1,07
S22 / -86,95 -96,45 -107,06 -118,07 -129,62 -142,41 -155,90 -169,19 178,80 163,19 172,06 133,35 66,63 -63,84 -82,46 -100,64 -116,75 -132,67 -152,96 -160,23 173,15 134,04 94,35 52,15 13,41 -20,49 -44,58 -65,34 -81,87 -96,60 -109,78 -121,05 -132,13 -141,28 -149,16 -157,67 -165,36 -171,65 -179,72 174,56 168,39
Ref. : CHA53901012 - 12-Jan.-01
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5390
Ref. : CHA53901012 - 12-Jan.-01
4/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
24-30GHz Medium Power Amplifier
Typical In JIG Measurements
Bias Conditions : Vd1,2,3,4 = 5 Volt, Vg1,2,3,4 for Id = 460 mA
CHA5390
In JIG Scattering Parameters
15 10 5 0 -5 -10 -15 -20 -25 5 10 15 20 25 Frequency (GHz) 30 35 40 S11 (dB) S22 (dB) S21 (dB) 0 -5 -10 30 25 20 15 10 5
Power Measurements
30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 24 25 26 27 28 29 Frequency (GHz) 30 31 32 P-1dB (dBm) Linear Gain (dB) Associated PAE (%)
Ref. : CHA53901012 - 12-Jan.-01
5/6
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
24-30GHz Medium Power Amplifier
CHA5390
Chip Assembly and Mechanical Data
Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is recommended
Bonding pad positions
Ref. : CHA53901012 - 12-Jan.-01 6/6 Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
24-30GHz Medium Power Amplifier
CHA5390
( Chip thickness : 100m. All dimensions are in micrometers )
Ref. : CHA53901012 - 12-Jan.-01
7/6
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5390
Ordering Information
Chip form : CHA5390-99F
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. : CHA53901012 - 12-Jan.-01
8/8
Specifications subject to change without notice
Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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